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Bey, Abdelkader Baghdad
- Impact Of Silicon Thickness On Electrical Performance Of Solar Cell In Submicron Technology
Abstract Views :137 |
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Authors
Mourad Hebali
1,
Mohammed Barka
2,
Abdelkader Baghdad Bey
2,
Miloud Abboun Abid
1,
Mohammed Benzohra
3,
Djilali Chalabi
1,
Abdelkader Saïdane
1
Affiliations
1 Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, AL
2 Department of Electrical Engineering, University of Mascara, AL
3 Department of Networking and Telecommunications, University of Rouen, FR
1 Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, AL
2 Department of Electrical Engineering, University of Mascara, AL
3 Department of Networking and Telecommunications, University of Rouen, FR
Source
ICTACT Journal on Microelectronics, Vol 4, No 3 (2018), Pagination: 665-668Abstract
In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.Keywords
In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.- Miniaturization of the Bandpass Microwave Filter Based on Spiral Metamaterial Resonators
Abstract Views :132 |
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Authors
Affiliations
1 Department of Electrical Engineering, University of Mascara, DZ
2 Department of Electrical Engineering, Ecole Nationale Polytechnique d'Oran Maurice Audin, DZ
3 Laboratory AMEL, University of Sidi-Bel-Abbes, DZ
1 Department of Electrical Engineering, University of Mascara, DZ
2 Department of Electrical Engineering, Ecole Nationale Polytechnique d'Oran Maurice Audin, DZ
3 Laboratory AMEL, University of Sidi-Bel-Abbes, DZ